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The purpose of this brief is to investigate the degradation of 1/f noise levels that is caused by Fowler-Nordheim (FN) tunneling stress for both the silicon nanowire transistor (SNWT) and the FinFET. The oxide traps that are generated under constant-voltage FN stress are extracted from the 1/f noise characteristics. Under the same FN stress voltage and time, the amount of oxide traps that is generated...
FinFETs are very promising for integrated circuit low signal anolog applications. In this paper we present, non-linear analysis of this type of devices using technology CAD (TCAD), which complements the already done studies about the advantages and possibilities of source/drain extension (SDE) engineering of FinFET for anolog applications. This is a simple and fast way to predict linearity using TCAD...
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