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In this paper, we introduce a new compact model of the parasitic resistance of a FinFET with a hexagonal-shaped raised source–drain (S/D) structure. In contrast to previous models that divided the extrinsic S/D region into three parts, we redefined the region boundaries and modeled them as a series connection of accumulation resistance, gradient resistance, bulk resistance, and contact resistance...
Reduced power without affecting delay is an important concern today. CAMs (Content Addressable Memories) are memories that implement lookup table functions using comparison circuitry. CAMs are used in table lookup Based applications such as Internet routers and processor caches. Deeply scaled technology node, with multigate devices, replacing planar MOSFETs, are expected to bring new era to CAM design...
A fully explicit physics-based model for ultrashort undoped (or lightly doped) FinFETs is proposed. In particular, a new physical approach to account for short-channel effects is presented as an extension of the long channel model. The modeling of small geometry effects relies on the accurate description of the potential profile along the channel and in particular on the position of the minimum potential...
In this paper, we present a FinFET compact model and its associated parameter extraction methodology. This explicit model accounts for all major small geometry effects and allows accurate simulations of both n- and p-type FinFETs. The model core is physics-based (long-channel model) and some semiempirical corrections are introduced in order to accurately simulate the behavior of ultrashort (L = 25...
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