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Nanoscale trigate FinFET with channel lengths down to 9.7 nm as projected by the 2013 International Technology Roadmap of Semiconductors (ITRS-2013) are simulated by means of quantum corrected 3-D Monte Carlo technique in the ballistic and quasi-ballistic regimes. Ballisticity ratio (BR) is extracted and found to reach values as high as 90% at $L_{G}=9.7$ nm. The impact of the ITRS-2013 scaling...
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