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A 1700 V 60 A SiC MOSFET has been fabricated and the high-speed switching characteristics are evaluated. The SiC MOSFET is designed to have low internal gate resistance (RGin) in order to realize the high-speed switching without parasitic turn-on of the opposite SiC MOSFET in a half bridge. By using the developed SiC MOSFETs, a 1700 V 360A power module with very low parasitic inductance structure...
We developed the All-SiC power module for photovoltaic Power Conditioner System (PCS). The All-SiC module has SiC-MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and SiC-SBD (Schottky Barrier Diode) which are sandwiched between SiN (Silicon Nitride) substrate and power circuit board. Thick copper block which is attached SiN substrate enhances low thermal resistance and Cu pin which is connected...
New semiconductors materials like silicon carbide (SiC) and gallium nitride (GaN) offer as major benefits the possibility of constructing high-voltage switching devices characterized by very low conduction and switching losses. Most of the related research and development has nevertheless been focused on voltage classes like 600V and 1200V. For the referred levels it is expected that such new devices...
Twenty amp normally-off enhancement mode 4H-SiC VJFETs are demonstrated with 1.9 kV avalanche breakdown voltage and a specific on-resistance of 2.8 mOmega-cm2. The VJFETs shown near ideal subthreshold characteristics and maintain enhancement mode functionality to temperatures exceeding 175degC due to the optimized channel design with low DIBL characteristics. The low specific on-resistance enables...
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