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For every power semiconductor chip designer, there is a trade-off between reaching a low Vce, sat value and a low desaturation current in order to produce more ruggedness against short circuit failures. If the width of the gate channel of an IGBT is increased, there is a hidden potential that can be used to increase the conduction performance significantly at the expense of an simultaneous higher...
In this paper, the detection of insulated-gate bipolar transistors (IGBT) short-circuit failures based on the gate charge characteristic is investigated. The main focus are impacts of the parasitic inductances and the operating point on the gate charge characteristic, as well as limitations for this protection concept by this effects. An analogous detection circuit is developed and relevant implementation...
In order to determine whether the IGBT short-circuit fault occurs, the collector-emitter voltage VCE of an IGBT has been detected in the IGBT gate drivers. The blanking circuit is needed in this kind of protection method to avoid the malfunction of the short-circuit protection during IGBT turn-on transient. However, this blanking circuit should be carefully designed for different types of IGBT modules...
A novel high-side well structure for a 1200V-class HVIC on a p-type substrate has been developed. The high-side well structure, consists of divided well regions with different voltage, makes it possible to integrate multiple circuits driven by different supply voltages on the high-side region in the HVIC. With implementing the developed structure, IGBT protection circuits on the high-side can be allocated...
Wind power has the largest development in renewable energy recently. Countries are asking more strict requirements for wind power generation system, like low voltage ride through capability; meanwhile, utility grid wants wind power generation system to do more, like separated active power and reactive power flow control, compensated harmonic and reactive power; also, from the wind power generation...
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