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A physics-based compact model of insulated-gate bipolar transistors (IGBTs) for power electronic circuit simulation is presented. The compact model is constructed as a combination of a metal–oxide–semiconductor field-effect transistor (MOSFET) part and a bipolar junction transistor (BJT) part with a conductivity-modulated base resistance in between them and is named “HiSIM-IGBT.” The model considers...
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