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This paper presents the new gate structure concept in trench gate IGBTs in order to have extended performance in faster switching without penalties on the on-state voltage drop (Von). The combination of the trench gate and adjacent emitter-connected trench achieves the dramatic Miller capacitance reduction while maintaining the enough Injection Enhancement (IE) effect. The experimental demonstration...
Trench gate field stop (FS) IGBT is widely used in various power applications owing to its low conduction and switching losses. However, the trench gate FS-IGBT induces the high saturation current due to its high cell density so that it deteriorates the short circuit ruggedness, which is essential for the power applications such as welding machines and motor controls. In this paper, a 600V trench...
Insulated Gate Bipolar Transistor (IGBTs) are widely used in both commercial and industrial appliances, and the applications for commercial appliances such as strobe flash, plasma display panel (PDP) TV and induction heating (IH) cooker, in particular, is diverse. We have developed advanced, application-specific IGBTs with high current density for strobe flash, fast turn-on characteristics for PDP...
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