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Recently, we proposed a novel 3-D vertical floating gate (FG)-type nand Flash memory cell array using the separated-sidewall control gate (CG) (S-SCG). This novel cell consists of one cylindrical FG with line-type CG and S-SCG structures. For simplifying the process flow, we realized the common S-SCG lines by using the prestacked polysilicon layer, through which variable medium voltages are applied...
Self-aligned shallow trench isolation recess effect on 42 nm node NAND flash to achieve high performance and good reliability has been studied and demonstrated. As cell STI recess is increased by 23 nm, 29% narrower cell Vth distribution width and 54% less cell Vth shift after 125°C, 2 hours can be obtained. Furthermore, the endurance window is obviously improved ~0.5V as the distance of the active...
The reliability of advanced embedded non-volatile memories has been discussed using the 2T-FNFN devices example. The write/erase endurance and the data retention are the most important reliability parameters. The intrinsic reliability mechanisms can be addressed through single cell evaluation, while the cell-to-cell variation determines the product level reliability. The cell-to-cell variation can...
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