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GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.
It is shown that the main condition, under which the process of germanium (Ge) nanoclusters and of the solid silicon-germanium solution formation takes place, is the sorption of atoms of silicon (Si) and Ge on the dielectric base. All stages of the process depend on the purity of the initial base, its orientation and chemical composition of the gas mixture. The size of Ge nanoclusters may be independently...
A thin palladium layer (~20 A) was selectively formed on top of amorphous germanium film before annealing and the effects of palladium layer on the lateral crystallization behavior of the amorphous germanium film were investigated through optical microscope, Raman spectroscopy, transmission electron microscopy, energy dispersion X-ray spectroscopy and selective area electron diffraction. Lateral crystallization...
In recent years, quantum dots have been successfully grown by self-assembling processes. For optoelectronic device applications, the quantum-dot structures have advantages such as reduced phonon scattering, longer carrier lifetime, and lower detector noise due to low-dimensional confinement effect. Comparing to traditional optoelectronic III-V and other materials, self-assembled Ge quantum dots grown...
We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85 A/W at 1.55 mum and 2 V reverse bias, and exhibit reverse dark currents of 100 mA/cm2 and external quantum efficiency up to 68%.
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