The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Studies of tin (Sn) whiskers have emphasized the role of intermetallic compound formation at the tin-substrate interface, which induces a high compressive stress state in the film, thought to be a necessary condition for Sn whisker growth. The goal of this work was to determine if whisker growth is possible from films where intermetallic compounds are largely absent. Thin films (~ 1600 Å) of Sn were...
A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290degC. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600degC with a threading dislocation density of ~1times105cm-2. According to channeling and random Rutherford backscattering spectrometry spectra, a chimin value of 10% and 3.9% was found, respectively, at the Ge/Si...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.