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The dielectric study of HfO2 thin films deposited on the platinized silicon substrate using RF-sputtering deposition technique have been carried out in the metal-insulator-metal (MIM) configuration over a wide temperature (300 to 500 K) and frequency (100 Hz to 1 MHZ) ranges. The film were deposited at pre-optimized sputtering voltage of 0.8 kV, substrate bias of 80 volt and annealing temperature...
Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectromechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon...
Bulk nanostructured (Bi,Sb)2Te3 compounds and GeTe based amorphous/nanocrystal composites have been successfully fabricated by the combined hydrothermal/hot-pressing and quenching/annealing methods, respectively. The (Bi,Sb)2Te3 nanopowders synthesized by hydrothermal method exhibit a hollow-like structure. After hot-pressing, the nanoscale grains varying from tens to hundreds of nanometers were found...
Nanostructuring is one of the effective approaches to lower the thermal conductivity of materials. Nanostructured skutterudite-related compounds CoSb3, Fe0.5Ni0.5Sb3, Fe0.25Ni0.25Co0.5Sb3 and Te-doped CoSb3 were synthesized by a solvothermal route. The bulk materials were prepared by hot pressing or spark plasma sintering from the solvothermally synthesized nanopowders. The thermal conductivity values...
The structural and soft magnetic properties of (Fe1-xSix)-Hf-C films (0??x??0.27) crystallized from the amorphous state were investigated as functions of the Si concentration. The samples crystallized with a nanocrystalline microstructure including dispersed ultrafine HfC particles. Most of the Si in the films was dissolved in bec Fe after crystallization. By increasing the Si concentration to x=0...
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