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We have used the classical Hall Effect to electrically characterize indium tin oxide (ITO) films grown by two different techniques on silica substrates. ITO films have the unique property that they can be both electrically conducting (and to be used for a gate electrode for example) as well as optically transparent (at least in the visible part of the spectrum). In the near infrared (NIR) the transmission...
We discuss problems in the preparation and analysis of the solid solution phase in the case of heavily phosphorus and boron doped polycrystalline silicon. Some currently used methods and the technology of polysilicon thin films preparation are presented. Based on and afore these discussions, we propose a process of preparation of a good quality heavily boron and phosphorus doped silicon thin film...
The resistivity of a quasi-one-dimensional structure fabricated without masks by 20-keV Ga+ focused ion beam (FIB) on crystalline Si substrates was investigated for the first time, along with an analysis of properties of implanted p+ layers. The junction depth of the 7?? off-axis implanted layer after annealing, which was measured by stain method, is 410 nm. The distribution profile was investigated...
Annealing conditions used for the preparation of semi-insulating CdTe after elimination of inclusions and precipitates are discussed. Second phase defects are eliminated by post-growth stoichiometric annealing and the semi-insulating CdTe is prepared by re-annealing under Te or Cd overpressure. In case of In-doped samples with high In concentration, semi-insulating CdTe with resistivity approximately...
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