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The boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by plasma enhanced chemical vapor deposition (PECVD). The microstructures of boron-doped nc-Si:H films were characterized and analyzed by Raman spectrum and atomic force microscopy(AFM). The thickness of the films was measured by high-resolution profilometer. The resistivity of the films was measured by four-point...
We have measured the terahertz transmittance of NiOx thin films grown on Si by thermal evaporation. The frequency-dependent conductivities were determined without resorting to a Kramers-Kronig analysis. Large changes in these spectral functions occurred due to varying deposition rate and annealing temperature. We observed a direct correlation between these parameters with the electronic and optical...
The purpose of using high density nano-crystalline silicon embedded in insulator matrices is the energy confinement of Si based quantum dot nanostructures. This approach aims to engineer wide band gap Si materials to be used as upper cell elements in Si based tandem cells in order to increased efficiency and low cost thin film processes. One of the main challenges is to obtain sufficient carrier mobility...
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
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