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Atomistic Kinetic Monte Carlo (KMC) diffusion modeling is used for dopant diffusion and defect analysis in ultra shallow junction formation in Si and SiGe. An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) using an atomistic KMC approach are shown. Thin SiGe layer with high Ge content for SiGe-channel QW has an impact on implantation damage and Boron-Transient Enhanced...
The demanding requirements for low power devices are stimulating new technological schemes. Cluster and cold implants have arisen as new strategies for dopant incorporation oriented to the formation of amorphous regions with reduced end-of-range defects. In this work we have used different atomistic simulation techniques to study the phenomena involved in these types of implant. The basis for the...
This paper presents a method for Aluminum inclusion into silicon based on ion mixing. Argon ions are implanted through a Al layer deposited on a silicon substrate. Several experiments consisting in implantation + annealing have been carried out in order to obtain low doped and deep P-N juntions. Besides, since this process has to be optimized, a implantation simulator based on the MonteCarlo method...
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