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In this brief, high-κ HfZrO (via atomic layer deposition) fabricated by a novel multideposition multiroom-temperature annealing (MDMA) technique in ultraviolet-ozone (UVO) ambient is systematically investigated by both electrical and physical characterization and is integrated with a TiN metal gate in a gate-last process. Compared with the conventional rapid-thermal-annealed sample, it is found that...
At a given thickness of HfO2, atomic layer deposited (ALD) TaN metal-gates showed higher equivalent oxide thickness (EOT) and flat-band-voltage (Vfb) shift compared to physical vapor deposited (PVD) TaSiN after annealing at 750degC for 30 min in N2. TEM data revealed the growth of a thicker interfacial oxide of 1.7 nm for TaN compared to 0.9 nm for TaSiN. In addition, TaN showed higher effective workfunction...
The HfO2/Hf stacked film has been applied as the gate dielectric in MOS devices. The HfO2 thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAH and O3 as precursors, Prior to the deposition of HfO2 film, a thin Hf metal layer was deposited as an intermediate layer. The deposition temperature of HfO2 thin film was 350degC and its resulted thickness was...
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