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Advanced gate dielectric stacks are comprised of multiple layers of different materials, including high-k gate dielectrics, high-mobility semiconductor channels, metal gate electrodes and interfacial layers with sub-nanometer thickness. The composition, point defect chemistry, interface atomic structure and interaction between the layers determine the properties of novel gate stacks. This paper reviews...
The anomalous gate-edge leakage current in n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs), which is caused by the encroached growth of nickel silicide across the p-n junction, is first reported. Furthermore, this encroached growth, which is caused by the isotropic and rapid diffusion of Ni atoms during the silicidation annealing, is successfully suppressed by the advanced...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
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