The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper discusses the newly introduced vertically-stacked silicon nanowire gate-all-around field-effect-transistor technology and its advantages for higher density layout design. The vertical nanowire stacking technology allows very-high density arrangement of nanowire transistors with near-ideal characteristics, and opens the possibility for design optimization by adjusting the number of nanowire...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
Indium antimonide (InSb)-based quantum-well field- effect transistors (QWFETs) are conceived as a promising candidate for low-voltage high-performance applications. In this paper, we show complete technology-circuit assessment of InSb-based QWFETs. The codesign approach spans from the device/SPICE models, logic/memory circuit analysis, to technology requirements. We show the feasibility of the use...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.