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Crystalline In-Ga-Zn Oxide (IGZO) including c-axis aligned crystal (CAAC) enables FETs to show high reliability and extremely low off-state current. CAAC-IGZO technology is expected to grow to main technology of next-generation displays and is already contributing to mass-production of liquid crystal displays. In this paper by focusing on a very important feature of CAAC-IGZO FET, extremely low off-state...
A new FPGA design using nonvolatile configuration memory (NCM) has been presented. NCM with large On/Off resistance ratio, such as nanoionic memory, is adopted to replace SRAM-based configuration memory. Since NCM is fabricated between interconnect layers of CMOS, silicon area is smaller than in the case of SRAM. Unlike previous FPGAs with nonvolatile programmable wires, we took architecture based...
An advantage of a RLD (Reconfigurable logic device) such as an FPGA (Field programmable gate array) is that it can be customized after being manufactured. However, there is a problem related to standby power when using SRAM as a configuration memory. Power gating, which is one of the power reduction techniques, is difficult to use in SRAM-based RLDs because of the high overhead - data hibernation...
An advantage of a RLD (Reconfigurable logic device) such as an FPGA (Field programmable gate array) is that it can be customized after being manufactured. However, there is a problem related to standby power when using it in SoC used in embedded systems. Power gating, which is one of the power reduction techniques, is difficult to use in SRAM-based RLDs because of the high overhead - data hibernation...
Field programmable gate arrays (FPGAs) are getting more and more attractive for military and aerospace applications, among others devices. The usage of non volatile FPGAs, like Flash-based ones, reduces permanent radiation effects but transient faults are still a concern. In this paper we propose a new methodology for effectively measuring the width of radiation-induced transient faults thus allowing...
Single, high energy, high LET, ions impacting on a Floating gate array at grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Every time a FG is crossed by a single ion, it experiences a charge loss which permanently degrades the stored information. If the ion crosses more than one FG, the threshold voltage of all those FGs interested by its track...
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