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Ohmic and low-resistance electrical contacts on silicon carbide have been demonstrated for the first time up to very high temperature (800°C) in an oxidizing environment. A specific contact resistance of about 2 × 10−4 Ω.cm2 was achieved after silicidation at 900°C. Long term aging tests in an oxygen atmosphere were performed, demonstrating ohmic behavior up to 1000 h at 550°C and over 4 h at 800...
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