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We have theoretically investigated the specific contact resistivity of n-type Si and Ge metal-insulator-semiconductor contacts with various insulating oxides. We have found a significant reduction of the contact resistivity for both Si and Ge with an insertion of insulators at low and moderate donor doping levels. However, at the higher doping levels (>1020 cmu−3), the reduction of the contact...
A Monte Carlo investigation of charge transport in Strained Silicon Schottky diodes is presented. The effect of strain on the reverse current for several state-of-the-art barrier heights is discussed and extensively analyzed. The results show an important increase of current with strain, which allows achieving lower effective barrier heights due to the shifting of Δ2 conduction band valleys. However,...
P-type Schottky barrier nanowire metal-oxide-semiconductor field-effect transistors are simulated with a rigorous quantum mechanical approach. The multi-band k·p method is employed for the description of hole transport in the silicon region while the parabolic effective mass Hamiltonian is used for the metallic source and drain. A characteristic transition from entirely thermionic transport to entirely...
In this work, we have presented the electrical characteristic of CoMnSi/MgO/n-Si junctions as a function of the doping concentration of Si. Films were fabricated by dc sputtering and post annealed at 400??C for 1 h without breaking the vacuum. The CoMnSi/MgO/n-Si junctions exhibited diode like characteristics at low doping concentration 1016/cc. This can be attributed due to oxide charges or interface...
Advances in process technology are making possible the fabrication of Schottky barriers with reliable, ideal electrical characteristics. With these advances, one can anticipate a rapid increase in the utilization of Schottky barriers, not only as discrete devices but also as a new component in integrated circuits. This article presents a unified picture that quantitatively characterizes both the Schottky...
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