The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Contact resistance at the transistor source/drain becomes a bottleneck for modern Si CMOS technology. To seek for contact solutions, this paper compares metal-insulator-semiconductor (MIS) contacts and metal-semiconductor (MS) direct contacts in terms of contact resistivity and CMOS compatibility. On p-type substrates, due to the favorable surface Fermi level pinning, MS contact has absolute advantage...
Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from 673nm to 785nm.
A dual workfunction gate (DWG) is proposed for the thin-gate-insulator Schottky-barrier MOSFETs (SBMOS) to adjust the barrier distributions by self-aligned tilt-angle implantation. Effects of DWG on SBMOS are investigated using 2-D simulations. Against junction engineering by dopant segregation, as the gate insulator scaled, the stronger gate coupling from DWG can both improve the on-state barrier...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.