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Extremely compact low-loss 4 channel arrayed waveguide grating with 147??92 ??m2 device size was demonstrated using ultrahigh index contrast InGaAsP photonic wire waveguides on Si, compatible for the monolithic integration of high-performance III-V CMOS transistors.
QKD systems widely employ Single-Photon Avalanche Diodes (SPAD) and set strong demand for improved features and performance. The present state of this detector technology is outlined and the main issues and prospect are discussed for Si-SPADs, suitable for free-space communications, and for InGaAs based SPADs intended for optical fiber communication systems.
We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.
In this context, two-dimensional photonic crystals (2DPCs) have excited a lot of interest for their potential use as active photonic devices. PCs are a periodic arrangement of materials with different refractive indices where the periodicity is of the order of the wavelength of light, which confers them with exciting possibilities to manipulate light signals within small volumes of materials. In this...
A long range surface plasmon polariton (LR-SPP) insulator-metal-insulator waveguide was integrated with a thin film InxGa1-xAs-based photodetector (PD) on silicon for planar detection of LR-SPPs, and demonstrated coupling from the LR-SPP to the PD.
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