The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, a deep submicron double-gate (DG) Gallium Nitride (GaN)-MESFET design and its 2-D threshold analytical model have been proposed and expected to suppress the short-channel-effects for deep submicron GaN-MESFET-based low power applications. The model predicts that the threshold voltage is greatly improved in comparison with the conventional Single-Gate GaN-MESFET. The developed approaches...
Due to the excellent control of DG MOSFETs over the short channel effects, they have been considered as a leading candidate to extend the scaling limit of conventional bulk MOSFETs. However, the hot carrier injection into gate oxides remains a potential problem in reliability field hence altering the device lifetime. In the present paper, a comprehensive drain current model incorporating hot-carrier-induced...
It's widely recognized that Gate-All-Around (GAA) MOSFETs are considered among the most probable choices to continue CMOS performance boost beyond the conventional scaling frontiers. Such device offers the best controllability of short-channel effects claimed to be the predominant factor limiting how far the downscaling can be achieved. However, the lack of analytic compact models for degraded drain...
An accurate new and simple numeral modeling of nano-scale dual gate n- MOSFET device in the ballistic region is presented. The model and the analysis is performed with channel length below 20 nm where electron transport is predominantly ballistic. In this paper a new developed modeling approach based on Boltzmann transport equation and Poisson equation in an n-channel nanoscale double-gate MOSFET...
The efficient modeling of unijunction transistor (UJT) is an burning issue in power industries. The available SPICE based model provides V-I characteristic of UJT. The output characteristic of UJT is nonlinear in nature and its modeling plays an important role in many applications where the output voltage of UJT drives any other device or circuit. In this paper a nonlinear device model is proposed...
An improved nonlinear current-voltage (I-V) characteristics model for nanometer range GaAs MESFETs has been developed. In this regard, Ahmed et al. model for submicron GaAs MESFETs has been modified. In this modification, the effects of both drain-to-source voltage, VDS, and gate-to-source voltage, VGS, on the output conductance, gd, have been incorporated. Moreover, the effect of VGS on the onset...
This paper presents the modeling and simulation of ZnO nanowire bridge and its application as a mass sensor. The resonant frequency shift due to added mass has been used as the sensing parameter. The finite element modeling (FEM) analysis results of the resonant frequency computation conform to the theoretical results within an error of 3%. An electrical equivalent circuit of the bridge structure...
Hybrid Nano (e.g. Nanotube, Nanowire) /CMOS circuits combine both the advantages of Nano-devices and CMOS technologies; they have thus become one of the most promising candidates to relax the intrinsic drawbacks of CMOS circuits beyond Moore's law. A behavioral simulation model for an hybrid Nano/CMOS design is presented in this paper. It is based on Optically Gated Carbon NanoTube Field Effect Transistors...
Most bipolar-transistor compact models incorporate some level of self-heating capability in order to determine the impact of thermal effects on circuit performance. Techniques for predicting mutual-thermal-coupling effects, however, are not readily available within most commercial CAD platforms. Presented in this brief is a technique which allows for the easy modification of design-kit-supplied models...
Equipped with two closely coupled channels, double gate (DG) MOSFETs can locally and dynamically alter the front gate threshold by an applied back-gate bias in independent drive (IDDG) configuration. We illustrate in this paper how a conventional ring oscillator built using odd-number of CMOS inverters could be transformed to a robust, compact and high-sensitivity voltage-controlled oscillator (VCO)...
This paper presents a novel particle swarm based optimization technique to extract small signal equivalent circuit model parameters of a fabricated GaAs MESFET device. The small signal model includes 16 different circuit elements and all are successfully and accurately extracted using the proposed technique. The proposed technique overcomes the difficulties of initial guess of solution and low convergence...
Compact diode models normally available in commercial simulators like Spectre or HSPICE do not scale the series resistance with P-N distance. The standard diode models scale with drawn area, assuming the current is vertical. However the diodes used for ESD protection in CMOS are operating as lateral diodes, so the resistance should scale with width, not area. This is a serious problem for circuit...
In this paper, the simulation of DG MOSFET based on ANFIS and ANN models are carried out and their results are compared. These models can reduce the computational time while keeping the accuracy of physics-based models, like non-equilibrium Greenpsilas function (NEGF) formalism. The compact models with computational intelligent allow for fast and accurate system level simulation of the nanoscale circuits.
RF noise shielding methods with different coverage areas (Pad and TML shielding) were implemented in two port test structures adopting 100-nm MOSFETs. Noise measurement reveals an effective suppression of NFmin but increase of NF50, simultaneously from the shielding methods. The suppression of NFmin is contributed from the reduction of Re(Yopt) while the noise resistance Rn is kept nearly the same...
This paper deals with an electrothermal model of high power heterojunction bipolar transistor (HBT) intended for CAD. The first section describes the model topology and sets the implemented equations that allow to take into account of the physical phenomena. The model also integrates scaling rules function of emitter length (W) and number of fingers (N). For the thermal aspect, low frequency impedance...
GaN HFETs and MISHFETs are promising power devices for RF and microwave power applications. However, the performance of devices can be compromised under some operating conditions. From the device development point of view, device optimization is necessary to obtain the best possible performance. For device modeling and design purposes, the device needs to be characterized and modeled accurately in...
This paper gives an overview on recent achievements in the modeling of GaAs or InP based HBTs. The emphasis lies on the description of weakly nonlinear behavior, and on advanced descriptions for 1/f and shot noise for nonlinear simulation. Although compact HBT modeling already reached a high level of accuracy, certain limitations remain that will also be addressed.
Explicit expressions describing the gate width dependences of HEMTs noise parameters have been obtained experimentally. The minimum noise figure and optimum source admittance are proportional to gate width, and noise resistance is inversely proportional to gate width. A scalable noise model is then developed, which accurately predicates noise parameters in a broad gate width range. The scalable noise...
The static and large-signal behaviour of a new model for a submicron partially-depleted (PD) body-tied (BT) silicon-on-insulator (SOI) MOSFET was recently shown to give excellent agreement with measurements. Here, we complete the model validation with a detailed study of its small-signal capabilities up to a frequency of 50 GHz. Additionally, a new direct procedure is described enabling the extraction...
This paper presents a rigorous numerical approach to the assessment of electro-thermal instabilities arising in high-power semiconductor devices operating under time-periodic conditions. The methodology is entirely developed in the frequency domain with reference to the harmonic balance technique, i.e. no time-domain calculations are required for the determination of the Floquet multipliers exploited...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.