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Wire bonding continues to be the predominant interconnect method in IC packaging. Though copper (Cu) wire bonding has been evaluated for more than a decade in replacing gold (Au) wire bonding, it is still a challenging process to adopt on several application fronts. Cost motivation is driving factor, the Cu wire bonding are replacing the Au wires in the assembly packaging production floors. Recent...
High density through-silicon-via (TSV) and cost-effective 3D die-to-wafer integration scheme are proposed as best-in-class foundry solutions for high-end CMOS chips at 28 nm node and beyond. Key processes include: TSV formation, extreme thinning of the TSV wafer and die-to-wafer assembly. The impact of extreme thinning on device threshold voltage, leakage currents, and Ion-Ioff characteristics of...
This paper presents preliminary results of a copper-based direct bond interconnect (DBIreg) 3D integration process that has been developed to leverage foundry standard copper dual damascene and Ziptronix bond technology to achieve scalable, very low Cost-of-Ownership, 3D interconnects with minimum foundry adoption barrier. Results achieved include 100% operable arrays of 72,500 3D copper DBIreg interconnections...
There is growing interest in Cu wire bonding for LSI interconnection due to cost savings and better electrical and mechanical properties. Cu bonding wires, in general, are severely limited in their use compared to Au wires; such as wire oxidation, lower bondability, forming gas of N2+5%H2, and lower reliability. It is difficult for conventional bare Cu wires to achieve the target of LSI application...
There is growing interest in Cu wire bonding for LSI interconnection due to cost savings and better electrical and mechanical properties. Cu bonding wires, in general, are severely limited in their use compared to Au wires; such as wire oxidation, lower bondability, forming gas of N2+5%H2, and lower reliability. It is difficult for conventional bare Cu wires to achieve the target of LSI application...
IC performance and cost drive interconnect dimensions to shrink to ever-smaller sizes the RC delay becomes the dominant factor to impact IC performance. The RC delay is a function of the product of the total resistance and capacitance of the whole interconnects structure. To reduce RC delay, copper interconnects were introduced to replace aluminum. At the same time, the low K material has been widely...
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