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This paper presents the all-digital phase-locked loop (ADPLL) with the local passive interpolation time-to-digital converter (LPI-TDC). Unlike the conventional LPI-TDC, the proposed TDC has a tristate inverter delay cell in only first delay chain, other delay cell is composed of only normal inverters that have same delay as tristate inverter. LPI-TDC based a tristate has the advantages of higher resolution...
In this paper, we have proposed a new SRAM cell architecture which consists of an asymmetric inverter pair to reduce the power consumption. In this work, we reduced the power and delay during write operation by a significant amount. However the area will be increased slightly. The average power consumption in SRAM cell is reduced by about 65.50% during a write operation and reduction in write delay...
In this paper, detailed analysis is given on the design of metastable-hardened and soft-error tolerant flip-flops while maintaining the basic characteristics of low-power and high-performance. We also propose two new flip-flop designs: pre-discharge soft-error tolerant flip-flop (PDFF-SE) and sense-amplifier transmission-gate soft-error tolerant flip-flop (SATG-SE). Following our main design approach,...
This work addresses an all digitally-controlled oscillator (DCO) design with three newly proposed hysteresis delay cells (HDC). According to circuit topologies, the three HDCs are defined as on-off, cascaded, and nested HDCs that provide different propagation delay. These HDCs comprise architecture, a power-of-two delay stage DCO (P2DCO), that every delay stage provides half delay than the previous...
The implementation of complex functionality in low-power nano-CMOS technologies leads to enhance susceptibility to parametric disturbances (environmental, and operation-dependent). The purpose of this paper is to present recent improvements on a methodology to exploit power-supply voltage and temperature variations in order to produce fault-tolerant structural solutions. First, the proposed methodology...
Polymorphic gates can be considered as a new reconfigurable technology capable of integrating logic functions with sensing in a single compact structure. Polymorphic gates whose logic function can be controlled by the level of the power supply voltage (Vdd) represent a special class of polymorphic gates. A new polymorphic NAND/NOR gate controlled by Vdd is presented. This gate was fabricated and utilized...
In this paper, we present a new technique to improve the reliability of H-tree SRAM memories. This technique deals with the SRAM power-bus monitoring by using built-in current sensor (BICS) circuits that detect abnormal current dissipation in the memory power-bus. This abnormal current is the result of a single-event upset (SEU) in the memory and it is generated during the inversion of the state of...
With the event of nanoscale technologies, new physical phenomena and technological limitations are increasing the process variability and its impact on circuit yield and performances. Like combinatory cells, the sequential cells also suffer of variations, impacting their timing characteristics. Regarding the timing behaviors, setup and hold time violation probabilities are increasing. This article...
While the CMOS analog circuits can be designed with the minimum-gate-length of the fabrication process in the alpha-power law MOSFET model, the length of a MOSFET gate has been chosen to be a larger scale than the minimum-gate-length in the conventional Shockleypsilas square model. In this paper, we describe a 6-b 100 MSPS CMOS current steering digital-to-analog converter (DAC) with the alpha-power...
The power consumption and the matching will be the principal issues at the 32 nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present the SON technology, leading to the simple fabrication of sustained mono-Si nano-membranes over an empty tunnel, and discuss on the application of this process to build-up electronic devices...
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