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We report a novel microfluidic surface-enhanced Raman scattering (SERS) device, which is achieved by bonding a polydimethylsiloxane cap with a microchannel structure onto an SERS-active substrate composed of noble-metal covered silicon nanopillar forests. The silicon nanopillar forests are fabricated by using nanomaterial dots, which are introduced in oxygen-plasma bombardment of photoresist, as etching...
Summary form only given. Carbon nanotubes are tiny hollow cylinders, made from a single grapheme sheet, that possess many amazing properties. Spurred by the Human Genome Project, deoxyribonucleic acid (DNA), carbon nanotube based biosensors are indispensable tools in molecular biology. A biosensor is an analytical device which converts a biological response into an electrical signal. A SWNT can be...
The limitations on carrier drift velocity due to high-field effect and randomly velocity vector in equilibrium is reported. The results are based on asymmetrical distribution function that converts randomness velocity vectors in zero-field to streamlined one in a very high electric field. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately...
Nanowires have been identified as a promising alternative for future electronics. A single coaxial nanowire photovoltaic device has been fabricated to power up nanoelectronic sensors and logic gates. The current work calculates and analyses the performance of the coaxial silicon nanowire using a semi-classical method. The current-voltage characteristics are calculated for both under dark and AM1.5G...
This paper propose a model for nonadiabatic electron capture and present a simulation that can explain the experimental results. It was found that the capture accuracy can be higher than the thermal-equilibrium limit. These findings might open up a way of utilizing a non-equilibrium process to break the thermal-equilibrium limit in the ultimate charge control.
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
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