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The limitations on carrier drift velocity due to high-field effect and randomly velocity vector in equilibrium is reported. The results are based on asymmetrical distribution function that converts randomness velocity vectors in zero-field to streamlined one in a very high electric field. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately...
Nanowires have been identified as a promising alternative for future electronics. A single coaxial nanowire photovoltaic device has been fabricated to power up nanoelectronic sensors and logic gates. The current work calculates and analyses the performance of the coaxial silicon nanowire using a semi-classical method. The current-voltage characteristics are calculated for both under dark and AM1.5G...
Direct patterning of silicon dioxide by electron beam lithography is used for the definition of metal nanojunction on wires fabricated on silicon on insulator (SOI) substrates. Devices based on a single silicon nanowire as small as 15 nm and several micrometers long are fabricated by means of a top down process based on electron beam lithography, silicon anisotropic etching and thermal oxidation....
Zinc oxide (ZnO) nanowire networks have been proposed as an alternative to organic and amorphous semiconductors for plastic electronics. Although the mobility of the ZnO networks is lower than that of individual nanowires, they offer the advantages of high transparency and flexibility. A major drawback of using individual nanowires in nano or microelectronic applications is the lack of a manufacturable...
This paper propose a model for nonadiabatic electron capture and present a simulation that can explain the experimental results. It was found that the capture accuracy can be higher than the thermal-equilibrium limit. These findings might open up a way of utilizing a non-equilibrium process to break the thermal-equilibrium limit in the ultimate charge control.
We report electrical characteristics of back-gated silicon nanowire field effect transistors (SNWFETs) fabricated using silicon nanowires synthesized by a standard vapor-liquid-solid process. It is shown that the mobilities obtained from the measured transconductances are reasonable only when the nanowire is fully depleted.
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
We present a successful synthesis of single crystalline homogeneous Si1-xGex nanowires (diameter: 7~52 nm) via vapor-liquid-solid mechanism. Results show that quality, density, and growth rate of Si1-xGex nanowires are greatly affected by the growth temperature and the single crystalline Si1-xGex nanowires without amorphous sheath layer can be obtained at optimized growth temperature. Control of the...
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