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We report a quantum-dot (QD) organic light-emitting diode (OLED) structure formed on Si substrate scaled down to nanometer dimensions. In our proposed OLED, the junction area is defined by a non-lithographically patterned oxide layer on Si substrate. We utilized gold nanoparticles as oxygen barrier mask during thermal oxidation of Si. Previously, we demonstrated a carrier injection mechanism originating...
Capacitive biosensor has been motivating subject to study for its zillion contributions in biomolecule detection. For this project, we present a novelty device provide highly sensitive detection using real time measurement. The fabrication of device involves only conventional lithographic process and simple dry oxidation process. By using the nanoscale dielectric spectroscopy between nanogap patterns,...
We present the microfabrication and initial testing of an AFM-tip like device, or nanotorch, that is capable of generating a very localized microplasma at its tip. The submicron region near its tip provides a unique manufacturing environment where new methods for controlled direct-write micro and nanofabrication can be tested. The device has been fabricated using both surface and bulk micromaching...
Atomic force microscopy lithography has been widely used for creating oxide patterns at the nanoscale on a number of different material surfaces. In this work we investigate the formation of uniform oxide lines and layers obtained by assembling arrays of overlapped oxide dots and lines, respectively. Simulations and experiments are conducted in order to assess the uniformity and consistency of the...
An independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible Vth controllability. The 4T-FinFET with a TiN metal gate is fabricated by a newly developed gate separation etching process. By appropriately controlling the Vth of the 4T-FinFET, we have successfully demonstrated...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
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