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In this letter, we report on high-performance depletion/enhancement-mode $\beta $ -Ga2O3 on insulator (GOOI) field-effect transistors (FETs) with record high drain currents ($\text{I}_{\mathrm {\sf D}}$ ) of 600/450 mA/mm, which are nearly one order of magnitude higher than any other reported $\text{I}_{\mathrm {\sf D}}$ values. The threshold voltage ($\text{V}_{\mathrm {\sf T}}$ ) can be modulated...
Dependence of threshold voltage (VTH) of a device and its extraction techniques are studied in this paper. To exactly model the transition characteristics of device, value of VTH plays an important role. Accuracy in the assessment of VTH of a device also depends upon the extraction method utilized. Several estimation techniques are already reported in literature. However, these techniques fail to...
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
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