The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The relentless shrinking of microelectronic devices makes thermal management an increasingly important topic. To this end, we have developed a computational approach, which allows the prediction of heat flux in nanostructures based on atomistic simulations. As prototypical system, we present results for a silicon — silicon dioxide nanostructure, with (a) abrupt interfaces, and (b) interfaces after...
Large scale single-crystalline graphene was achieved on copper foils with CH4 as the precursor with a sandwich method. With a PMMA-assisted method, single-crystalline graphene was transferred to the marked SiO2/Si substrate. Quantum Hall devices will be fabricated by E-beam lithography and metallization. And, quantum Hall effect will be measured.
Wafer-scale monolayer graphene film was synthesized on Cu foils by chemical vapor deposition in a 3-in thermal furnace. Graphene film was transferred to the surface of SiO2 (300 nm)/Si substrates using a polymer-assisted method. Hall bar structures were fabricated by lithography and E-beam deposition for the electrical property measurement. Perfect symmetrical ohmic resistance distribution was achieved...
We report in CPEM 2012 the preparation of the micromechanical cleavage (MC) and the chemical vapor deposition (CVD) graphene films and the fabrication of the quantum Hall resistance (QHR) devices on these films. Graphene films are on the SiO2/Si substrates. Spectroscopic Raman analysis indicates monolayer graphene films are obtained. Hall bar structures are formed on graphene films by e-beam lithography,...
We demonstrate one of the basic building elements of graphene electronics, logic inverter, based on graphene-on-boron nitride material system. The inverter is composed of two adjacent graphene-channel field-effect transistors (GFETs). The impacts of hexagonal boron nitride, a new supporting substrate material, on major device performance metrics of GFET such as small-signal transconductance g and...
We propose schemes of using graphene field effect transistors (GFET) to detect ionizing radiation. The detection is based on the high sensitivity of graphene to local change of electrical field that can result from the interaction of radiation with a semiconductor substrate in a GFET. We present preliminary modeling and experimental work to develop a prototype sensor, and discuss potential advantages...
We use infrared microscopy to image the temperature profile of graphene field-effect transistors operating at constant source to drain current bias. We find a peak in the temperature profile, i.e. a ??hot spot?? appears near the drain (anode) electrode of the graphene sheet at high current while operating in the hole-doped regime. We shift the hot spot position on the graphene sheet by tuning the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.