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A novel radiation sensor based on a graphene field effect transistor (GFET) is experimentally demonstrated. The detection relies on the high sensitivity of the resistivity of graphene to the local change of electric field that can result from ionized charges produced in the underlying semiconductor substrate. We present the experimental results of our study on the response of graphene-based radiation...
Graphene-based radiation detectors (GRDs) have a potential to provide new and improved capabilities when compared to more conventional detectors. The unique electrical properties of graphene can result in a GRD response that resembles that of a transition edge sensor. We have modeled the interaction of gamma rays with a variety of GRD absorber materials using GEANT4. The transport of the charge carriers...
A novel radiation detector based on a graphene field effect transistor (GFET) is experimentally demonstrated. The detection in GFET relies on the high sensitivity of the resistivity of graphene to the local change of electric field that can result from ionized charges produced in the underlying semiconductor substrate. We present the experimental results of our study on the graphene-based radiation...
We propose schemes of using graphene field effect transistors (GFET) to detect ionizing radiation. The detection is based on the high sensitivity of graphene to local change of electrical field that can result from the interaction of radiation with a semiconductor substrate in a GFET. We present preliminary modeling and experimental work to develop a prototype sensor, and discuss potential advantages...
Ultrathin graphitic films containing only one or a few graphene layers have received great attention as a promising channel material to make "carbon-based" transistors, particularly for high speed and/or low power electronic devices. Back-gated or front-gated graphene field effect transistors (GFET) made from exfoliated (from bulk graphite) or epitaxially-grown (by surface decomposition...
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