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This paper presents an experimental measurement method to obtain the transient junction temperature profile of power semiconductor devices in surge current operations. Even though a few methods to estimate the device junction temperature have been reported, they are not focused on dynamic surge conditions or experimental measurements which are important for power conversion and protection equipment...
The thermal finite element model of the power module based on the actual physical conditions is not easy to be consistent with the experimental results, limited by the accuracy of the input conditions. In this paper, a method of calibrating the transient thermal finite element model using the measured thermal structural function is proposed and practiced. The structural functions derived from the...
Thermal transient testing is the industry de-facto test method for the identification of junction temperatures and structural defects inside semiconductor devices. Unfortunately, at the beginning of the thermal transient curve in each case an electric effect can be observed, which appears immediately as the unit power step takes place. This electric effect covers the initial phase of thermal transient,...
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