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Deep level transient spectroscopy (DLTS) measurements were carried out on silicon diodes prepared by Al-diffusion into n-type material. The main purpose of the experiments was to test our theory concerning the possibility of unambiguous interpretation of the DLTS spectrum. A simple method of correct assignment of the observed traps to either side of the junction is outlined. Using this method based...
CdS/CdTe/Te heterojunction have been studied by capacitance-voltage measurements over the temperature range 293 K-393 K. The potential of diffusion, profile of the ionized-charge concentration in the space charge region of heterojunction and its thickness are derived from the heterojunction capacitance measured at different bias voltages. The charge carrier concentrations calculated from (S/C)2 =...
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