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An annealing method capable of forming highly activated shallow junctions in Ge CMOS is still lacking. For the first time, nonmelt submillisecond laser spike annealing (LSA) is demonstrated to achieve high activation level, excellent diffusion control, and resulting low contact resistivity for both n-type and p-type Ge junctions when using P and B as the dopants, respectively. The thermal stability...
N-type dopant activation by long dwell laser spike annealing, and subsequent deactivation during furnace annealing, has been studied using Hall measurements. Carrier activation is improved as the dwell time is increased from 10 to 20ms. For high concentration P junctions, deactivation is observed at temperatures as low as 400°C. However, activation can be fully recovered by a second LSA anneal suggesting...
In the present work we report on Therma-Probe (TP) measurements to quantify the residual lattice damage after sub-melt laser annealing for different Ge pre-amorphization implant (PAI) conditions. The calibration of the TP signal, the influence of different laser parameters and the relation to junction leakage is discussed.
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
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