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Ultra-violet (UV) Raman and multiwavelength photoluminescence (PL) characterization techniques are examined as potential in-line, non-contact dopant activation and diffusion process monitoring techniques for ion implanted silicon in implant activation process steps. Excellent correlations among sheet resistance (Rs), B depth profiles, UV Raman and multiwavelength PL characterization results were achieved...
A novel silicide formation technique using millisecond anneal is reported for the first time, delivering superior silicide film morphology that translates electrically into significant yield improvement over a conventional soak anneal, without any degradation of transistor performances. In addition, we demonstrate how this new technique enables the integration of thin silicides required for further...
In the present work we report on Therma-Probe (TP) measurements to quantify the residual lattice damage after sub-melt laser annealing for different Ge pre-amorphization implant (PAI) conditions. The calibration of the TP signal, the influence of different laser parameters and the relation to junction leakage is discussed.
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
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