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We successfully fabricated Al-foil/p-Si junctions by surface activated bonding (SAB). We found that the junctions revealed Schottky properties by measuring their current-voltage characteristics. We also found that the reverse-bias current of the junctions was decreased, i.e., their electrical characteristics were improved by annealing at temperatures below 200 °C. These results demonstrate that the...
We investigated the electrical properties of highly-doped n-Si/n-Si and p-Si/p-Si junctions fabricated by using the surface activated bonding. Heights of potential barrier formed at the respective bonding interface were estimated by measuring dependence of their current-voltage characteristics on the ambient temperature. The heights of barrier were found to be varied due to annealing often the bonding...
The electrical properties of GaAs/GaAs junctions fabricated by using surface-activated bonding (SAB) were investigated. We extracted the potential barrier heights at 300-°C-annealed GaAs/GaAs interfaces from their current-voltage characteristics measured at varied ambient temperatures and estimated the energy of charge neutral level ECNL and the density of interface states Dit.
Owing to its deep diffusion requirement for discrete power diode of rating above 400 V and 1 A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100degC and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which...
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