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SRAM area is expected to exceed 90% of overall chip area because of the demand for higher performance, lower power, and higher integration. To improve memory density, memory bitcells are scaled to reduce their area by 50% each technology node. High density SRAM bitcells use the smallest devices technology, making SRAM more vulnerable for variations. This variations influence the stability of SRAM...
SRAM area is about to exceed 90% of overall chip area to satisfy the increased chip functionality demand. Smaller transistor dimensions increases chip density. At these nano technology nodes variation in Process, voltage, and Temperature (PVT) affects the stability of SRAM cell. This paper investigates six transistors (6T) SRAM stability in hold/standby, read, and write mode design consider SOI MOSFET...
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