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The limiting performance and reliability of metal-oxide-semiconductor (MOS) devices is determined by intrinsic bonding defects. These are primarily O-atom vacancies. A universal model, developed initially for (i) nano-crystalline transition metal (TM) Oxides is extended to O-vacancies in (i) non-crystalline SiO2 and Si oxynitride alloys. Differences between electron injection into, and trapping ay...
Heteroepitaxy SiGe on Si by liquid phase epitaxy (LPE) is a potential material for photovoltaic application. The Si0.05Ge0.95 solar cell with an energy gap of 0.72 eV can lead to a 7 percentage point increase in the Si-based multi-bandgap system or any multi-bandgap system that contains Si as the 1.1 eV solar cell. In this initial work we report first growth SixGe1-x with 0.5<x<1 on Si substrate...
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