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Self-heating and substrate effects are discussed and qualitatively compared in the ultra-thin body ultra-thin BOX (UTB2) devices without a ground plane. Ultra-thin body is aggravating thermal properties of the devices due to the interface effects. Ultra-thin BOX (10 nm) improves heat dissipation from the channel to the bulk silicon substrate but also results in strongly pronounced substrate effects...
Design consideration for an 80 nm channel length SOI MOSFET employing double step buried oxide (DSBO) is presented. The electrical characteristics and temperature distribution are analyzed and compared with conventional silicon-on-insulator (C-SOI) MOSFETs. The DSBO devices are shown to have better leakage and subthreshold characteristics. Furthermore, the channel temperature is reduced during high-temperature...
A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
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