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We describe the fabrication and characteristics of high voltage enhancement mode SiN/AlGaN/GaN/AlGaN double heterostructure FET devices. The Si3N4 not only acts as a passivation layer but is crucial in the device concept as it acts as an electron donating layer (1). By selective removal under the gate of the in-situ SiN, we realize e-mode operation with a very narrow threshold voltage distribution...
This paper presents low temperature surface passivation using atomic layer deposited aluminium oxide (Al2O3) and hafnium oxide (HfO2) thin films on different silicon substrates. Al2O3 and HfO2 thin films were deposited on p (111) and p (100) Si substrates with different ALD cycles, respectively. Capacitance-voltage (CV) measurement was executed on Al/oxide/Si structures. CV measurements were used...
In this paper, electrical and interfacial properties of MOS capacitors with atomic layer deposited (ALD) Al2O3, HfO2, and HfAlO gate dielectrics on sulfur-passivated (S-passivated) GaAs substrates were investigated. HfAlO on p-type GaAs has shown superior electrical properties over Al2O3 or HfO2 on GaAs, and it is attributed to the reduction of the Ga-O formation at the interfacial layer. HfAlO on...
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