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We have demonstrated well-behaved accumulation-mode all oxide NMOSFETs with amorphous atomic-layer-deposited (ALD) LaAlO3 gate dielectric stacks on crystalline SrTiO3 substrates. A maximum drain current exceeding 10 mA/mm has been obtained on a 3.75μm-gate-length device, proving a very conductive channel can be formed at the oxide-oxide interface. Four different gate dielectric stacks, which are Lafirst...
We report on the demonstration of enhancement-mode n-channel GaN-based hybrid MOS-HFETs realized on AlGaN/GaN heterostructure on silicon substrates with a large drain current operation. The GaN-based hybrid MOS HFETs realized the threshold voltage of 2.8 V, the maximum drain current of over 70 A with the channel width of 340 mm. This is the best value for an enhancement-mode GaN-based FET. The specific...
AlGaN/GaN heterostructure field effect transistors (HFETs) fabricated from maskless selectively grown mesas by ammonia molecular beam epitaxy on Si(111) substrates are demonstrated. With 0.8 mum gate length, the devices exhibited maximum drain current and trans- conductance of 425 niA/mm and 140 mS/mm, respectively. Values of fT and fMAX of 8 and 19 GHz, respectively, were obtained from RF measurements...
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