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AlN films, doped with Cr, were deposited on p-Si substrates by pulsed laser deposition (PLD). Al-PLD AlN:Cr-Si MIS structures were formed and their current-voltage and 1 MHz admittance characteristics were measured. The analysis of the direct and alternating current conductance and capacitance dependences of these MIS structures on applied voltage revealed that the charge transport in these films...
We demonstrate for the first time Schottky barrier height (SBH) tuning using interfacial SiO2/high-kappa dipoles resulting in SBH les 0.1 eV from the conduction band-edge (CBE) and SBH les 0.2 eV from the valence band-edge (VBE). The near band-edge electron and hole SBHs have been obtained using a dielectric-dipole mitigated (DDM) scheme with single metal on Si junction. By optimizing the dielectric...
This paper shows electrical characterizations and reliability analysis performed on AlGaN/GaN HEMTs processed on epitaxial layers grown on composite substrates. The results are very promising for the fabrication of low cost high power microwave transistors for wireless communication systems. The composite substrates constitute a valuable alternative to the silicon since better thermal properties are...
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