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In this paper, GaN-based MIS-HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the breakdown voltage was improved to be over 2.45 kV using high-resistive carbon doped buffer layers with a larger thickness of over 7.3 mum. The maximum drain current was estimated to be over 115 A using MIS-structures. A trade-off between the specific on-resistance...
In this work, we report for the first time the detailed temperature dependent microwave noise characteristics of AlGaN/GaN HEMTs on Si substrate from -50degC to 175degC (223 K to 448 K). The AlGaN/GaN HEMT layer structures and fabrication details were published. The fabricated HEMTs have also gone through post gate annealing at 400degC for 5 minutes. However, it is interesting to note that at high...
AlGaN/GaN heterostructure field effect transistors (HFETs) fabricated from maskless selectively grown mesas by ammonia molecular beam epitaxy on Si(111) substrates are demonstrated. With 0.8 mum gate length, the devices exhibited maximum drain current and trans- conductance of 425 niA/mm and 140 mS/mm, respectively. Values of fT and fMAX of 8 and 19 GHz, respectively, were obtained from RF measurements...
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