The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, a systematic study on combining n-type and p-type interface dipoles for metal gate work function (Phim) engineering within the same gate stack was conducted. Ultrathin terbium (Tb) and aluminum (Al)-based interlayers (ILs) were utilized for n- and p-type dipole formation, respectively, to modulate the net interface dipole magnitude and polarity within a metal gate stack. By controlling...
We show, for the first time, a reversal in net interface dipole polarity (initially n-type) for a metal gate stack by forming p-type interface dipoles after a 950degC anneal. This was achieved in both TaN/SiO2 and TaN/high-k gate stacks whereby terbium (Tb) and aluminum (Al)-based interlayers were used to form n-type and p-type dipoles, respectively. We also demonstrate the continuous tunability of...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.