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In this paper, we discuss the requirements of direct bonding and show how it can provide photonic electronic integrated circuits including surface grating couplers, Ge photodiodes and energy-efficient hybrid Si/III-V lasers.
To meet future 3D stacking requirements on wafer-to-wafer level, we successfully demonstrate oxide-oxide direct bonding on 200 mm with and without copper level utilizing face-to-face alignment and bonding within one process module as well as on the same chuck.
Self-assembled configurations of nanostructures are expected to play an increasingly important role in devices design, as an alternative to conventional microelectronics technology. Conventional techniques are generally limited by the lack of simultaneous control on positioning, density and size uniformity of the nanostructures. To overcome these problems a new substrate based on controlled direct...
In order to solve the pressure measurement problem in the harsh environment, such as high temperature above 200degC, a special piezoresistive pressure sensor chip has been developed. Based on the MEMS (micro electro-mechanical system) and SIMOX (separation by implantation of oxygen) technology, the piezoresistive pressure sensor chip was constituted by silicon substrate, a thin buried silicon dioxide...
SiO2/SiO2 direct wafer bonding and BCB bonding have been compared to realize membrane GalnAsP wired waveguides on Si Substrate. Bonding environment and pressure were essential for BCB bonding and SiO2 direct bonding, respectively.
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