The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have developed III-V-OI MISFETs on Si with buried SiO2 and Al2O3 layers fabricated by low damage and low temperature direct wafer bonding processes. The III-V-OI MISFETs with both buried SiO2 and Al2O3 layers have demonstrated the high electron mobility of 1200 cm2/Vs. In addition, we found that the buried Al2O3 layers can improve the interface condition between III-V and the buried oxide layers,...
A novel PDMS bonding technique using photocatalyst has been developed to fabricate polymer-based DNA sample preparation microchip for molecular diagnostics. To bond PDMS substrate onto organosilane-modified pillar arrays, organosilane layer on top plane of micropillars was selectively removed through photocatalytic oxidation using TiO2 and UV irradiation. The proposed method exposed underlying SiO...
Self-assembled configurations of nanostructures are expected to play an increasingly important role in devices design, as an alternative to conventional microelectronics technology. Conventional techniques are generally limited by the lack of simultaneous control on positioning, density and size uniformity of the nanostructures. To overcome these problems a new substrate based on controlled direct...
Low-temperature aluminum-germanium (Al-Ge) eutectic bonding has been investigated for monolithic three-dimensional integrated circuits (3DIC) applications. Successful bonds using Al-Ge bilayer films as thin as 157 nm were achieved at temperatures as low as 435degC, when applying 200 kPa down-pressure for 30 minutes. The liquid phase of the eutectic composition ensured a seamless and void-free bond...
We present 1.55 mum InGaAsP/InP Fabry-Perot lasers on silicon realized by a die-to-wafer CMOS compatible SiO2/SiO2 bonding process. The devices run under continuous wave operation at room temperature with a maximal output power of 4 mW and a threshold current of 108 mA at 15degC.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.