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The advantages of the SiOCH low-k films with hydrocarbon cross-links (hydrocarbon bridges) Si-Cn-Si have been reported recently. However, hydrocarbon cross-links are not produced so selectively by the PECVD method, since the hydrocarbon components tend to form terminal atom groups such as Si-CH3. For producing hydrocarbon cross-links effectively by the PECVD method, the polymerization reactions of...
This paper reports a novel method of anodic bonding with 3 intermedia layers, silicon carbide, tungsten and silicon dioxide. The bonding process lasting 10 minutes is in vacuum, with temperature 400degC, pressing force 1000 N and voltage 1300 V. During the process, Si+ and O- ions react at the interface of silicon and glass wafers which create Si-O bonds and make bonding stable. After removing off...
We present 1.55 mum InGaAsP/InP Fabry-Perot lasers on silicon realized by a die-to-wafer CMOS compatible SiO2/SiO2 bonding process. The devices run under continuous wave operation at room temperature with a maximal output power of 4 mW and a threshold current of 108 mA at 15degC.
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