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Via last TSV (through silicon via) technology is more and more applied in 3D WLCSP, which can decrease package volume and increase I/O density. The process of via last includes temporary bonding, grinding, photolithograph, silicon etching, SiO2 etching, CVD, PVD, plating and so on. Silicon etching and SiO2 etching are important process of via last TSV package for interconnect technology. Temporary...
Temporary bonding and release processes are regarded as the critical technologies in 2.5D and 3D IC integration. The process is especially challenging when the device contains high topography structures like copper pillar bumps. This paper presents the results of simulation, bumping process, wafer temporary bonding, thinning and debonding. Through careful consideration and optimization of the above...
A three-layer-stacked wafer with CMOS devices was fabricated by using hybrid wafer bonding and backside-via-last TSV (7-µm diameter/25-µm length) processes. Successful fabrication of this wafer confirmed that copper/polymer hybrid wafer bonding brings seamless copper bonding in face-to-face (F2F) and back-to-face (B2F) configurations. The low capacitance of the TSVs results in the highest level of...
Temporary bonding and release processes are regarded as the critical technologies in 2.5D and 3D IC integration. The process is especially challenging when the device contains high topography structures like copper pillar bumps. This paper presents the results of simulation, bumping process, wafer temporary bonding, thinning and debonding. Through careful consideration and optimization of the above...
A three-layer-stacked wafer with CMOS devices was fabricated for the first time by using hybrid wafer bonding and backside-via-last TSV (7-μm diameter/25-μm length) processes. Successful fabrication of this wafer confirmed that copper/polymer hybrid wafer bonding brings both seamless copper bonding and void-less underfilling in face-to-face (F2F) and back-to-face (B2F) configurations. The backside-via-last...
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