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The surfaces of optoelectronic materials such as silicon, GaAs, nitrides and oxides are known to be very difficult to bond with low melting point solders (<;300°C). Small portion of active elements (3.1~4.1wt% Ti and 0.2% Ce) added into conventional SnAg solder could improve its solderability with inorganic material surfaces. In this work, some bonding experiments using active solder containing...
This paper describes the thermo-mechanical design of an advanced zero-level capping technology used for packaging of a MEMS die. The package approach uses Intermetallic Compound (IMC) bonding to seal the MEMS die with a cap, and uses Through Silicon Via's (TSV) to provide the electrical connections from the MEMS die to the second level substrate (LTCC or PCB). Advanced FEM based thermo-mechanical...
Recently the requirement for portable products, such as mobile phones, digital cameras, PDAs and game consoles, has been increasing rapidly and consumers want to easy to carry them and have multi-functions as well as lower price. So it's necessary to develop the semiconductor packages with thin and small size, high performance and low cost. And various types of SiP (system in package) technologies...
Direct bonding between large silicon (Si) chips and copper (Cu) substrates using pure silver (Ag) as bonding material has been successfully developed. The Si-Ag-Cu direct bonding process was performed in two assembly structures, die attachment and flip-chip interconnect, at low process temperature of 250degC. It is a typical reflow temperature of lead-free (Pb-free) solders. In die attachment structure,...
Developments of ultra fine pitch and high density solder microbumps for advanced 3D stacking technologies are discussed in this paper. CuSn solder microbumps with 25 ??m in pitch are fabricated at wafer level by electroplating method and the total thicknesses of the platted Cu and Sn are 10 ??m. After plating, the micro bumps on the Si chip are reflowed at 265??C and the variation of bump height measured...
Fluxless bonding between large silicon (Si) chips and copper (Cu) substrates using electroplated indium (In) and silver (Ag) as solders has been successfully developed. The nucleation mechanism in In-Ag system is first studied. It is interesting to discover that In reacts with underlying Ag and forms Agln2 as soon as it is electroplated at room temperature. To reduce stress caused by coefficient of...
A fluxless process of bonding silicon to Ag-cladded copper using electroplated In-Ag multilayer structure is developed. The Ag cladding on the copper substrate is a stress buffer to deal with the large mismatch in coefficient of thermal expansion (CTE) between semiconductors such as Si (3 ppm/degC) and Cu (17 ppm/degC). To manufacture Ag on copper substrate, two techniques are developed. The first...
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