The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
To meet low power circuit requirements, increased channel mobility is required to boost transistor performance and reduce Vdd for lower power dissipation without performance penalty. SOI and more advanced engineered substrates developed on the SOI platform provide solutions for 32 technology nodes and beyond. The options include process-induced strain, biaxial strain virtual substrates, modification...
Prospects of velocity enhancement as the main driver of performance scaling in future CMOS are examined. Limits of velocity enhancement in uniaxially strained Si are first presented and then outlooks of novel channel materials such as Ge and III-V semiconductors are discussed. Finally, characteristics of performance scaling under power dissipation constraints are studied.
This paper presents simulations on tunnel field-effect transistors (TFET) and comparisons carefully to assess their impact at the same supply voltage. Current-voltage characteristics are simulated for n and p TFETs with different channel materials:Si,Ge,InGaAs, and InAs. Results show that InAs has the highest current for its smallest bandgap and effective mass, but it can not meet the off-state leakage...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.